TPAR3J S1G
TPAR3J S1G
Part Number TPAR3J S1G Description DIODE AVALANCHE 600V 3A TO277A Package / Case TO-277, 3-PowerDFNUnit Price Request a QuoteLead Time To be ConfirmedDetailed Description Diode Avalanche 600V 3A Surface Mount TO-277A (SMPC)
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TPAR3J S1G - Product Attributes
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Discrete Semiconductor Products / Diodes - Rectifiers - Single
Datasheet TPAR3D - TPAR3J Standard Package 1 Manufacturer Taiwan Semiconductor Corporation Series - Packaging Cut Tape (CT) Part Status Active Diode Type Avalanche Voltage - DC Reverse (Vr) (Max) 600V Current - Average Rectified (Io) 3A Voltage - Forward (Vf) (Max) @ If 1.55V @ 3A Speed Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr) 120ns Current - Reverse Leakage @ Vr 10µA @ 600V Capacitance @ Vr, F 58pF @ 4V, 1MHz Mounting Type Surface Mount Package / Case TO-277, 3-PowerDFN Supplier Device Package TO-277A (SMPC) Operating Temperature - Junction -55°C ~ 175°C
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